Abstract
AbstractIn this paper we use a first-principles local density approximation-based approach to study the properties of the n-type impurities nitrogen and phosphorous in diamond. We determine impurity donor level positions of 0.90 eV and 1.09 eV, respectively for C:N and C:P, measured relative to the bottom of the conduction band. We also study the energetics of impurity atom relaxation along the <111> direction in the diamond lattice. While experimental observations indicate a trigonal distortion about the impurity site, we find the on-center position for both impurity atoms to be stable against the simple <111> relaxation.
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