Abstract
The distribution of C and A nitrogen defects in octahedral growth sectors of a synthetic diamond grown by the temperature gradient method (Fe–Ni–C system) at P=6.0 GPa and T=1470–1495 °C was thoroughly studied by FTIR spectroscopy. Applied zoning technique during crystal growth made it possible to determine the post-growth annealing duration, derive nitrogen aggregation rate constants (based on a second-order model) and evaluate the linear growth rate at points of analysis. The results demonstrate that the rate constant of A-defect formation can change widely within the separate octahedral growth sectors of the same single crystal (from 3.0×10 −7 to 7.5×10 −10 ppm −1 s −1) and is non-linearly dependent on the linear growth rate. The variation in nitrogen aggregation rate is proposed to connect with the non-uniform nickel incorporation in diamond lattice, which takes place as a result of linear growth rate changing.
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