Abstract
The incorporation of nitrogen as an acceptor in ZnO has been investigated in several ways. First, the growth parameters which allow achieving the lowest residual n type conductivity on undoped samples have been investigated. Second, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy yielding incorporation of nitrogen in the range 1016–1021 cm−3 with a strong compensation of the natural donors. The effect of thermal annealing under oxidizing atmosphere leads to p-type conversion. Finally, diffusion of nitrogen was carried out on undoped MOVPE layers under high pressure conditions stemming from the decomposition of NH4NO3. Conversion to p-type conductivity was observed in a systematic way with measured hole concentrations up to 6.5 × 1017 cm−3. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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