Abstract
A GaN/ultrathin AlN∕GaN heterojunction has been used to introduce a GaN spacer between the GaN channel and the AlGaN barrier in AlGaN∕GaN high electron mobility transistors (HEMTs). In conventional AlGaN∕GaN devices, the alloy scattering of the electrons with the AlGaN barrier degrades the electron velocity at high electric fields. This effect is significantly reduced in GaN-spacer transistors, which therefore have much better high field transport properties. While the dc performance of these transistors is similar to conventional AlGaN∕GaN HEMTs, a 20% increase in the electron velocity has been measured by two different techniques.
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