Abstract
We review the progress in the field of InGaN-based light-emittingdiodes (LEDs) and discuss the issue of threading dislocations andthe luminous efficiency. The first candela-class blue LEDs havebeen developed. An InGaN layer was used to produce these LEDsinstead of a GaN active layer. The quantum-well structure InGaNactive layer dramatically improved the external quantum efficiency.There are a number of threading dislocations in nitride-based LEDs.InGaN LEDs, however, have quite high external quantum efficiency.With regard to this, it is thought that the fluctuation of theindium mole fraction is strongly related to the high externalquantum efficiency. Considering the density of threadingdislocations in the nitride-based LEDs, we discuss what can improvethe external quantum efficiency of nitride-based LEDs.
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