Abstract
Nitride layers were prepared on cleaved GaAs(110) surfaces at room temperature by using two different experimental approaches. GaN surface films were obtained by adsorption of nitrogen atoms via an anion exchange, while AlN films were deposited by simultaneous evaporation of aluminum and exposure to a beam of ammonia molecules (reactive molecular beam epitaxy). The layers grown were investigated by using Auger electron, low-energy electron energy-loss, ultraviolet photoemission. soft X-ray and X-ray photoemission spectroscopy as well as a Kelvin probe. To identify the formation of the nitride layers, some of the experimental tools were also applied to GaN(0001) and AlN standards.
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