Abstract
We have studied the properties of InGaN layers and quantum wells grown on gallium nitride substrates with intentional surface misorientation with respect to its crystalline c-axis. Misorientation varied in the range from 0 up to 2 degree. The indium content was changed by using the different growth temperature (between 750 °C and 820 °C) during metalorganic vapor phase epitaxy. With increasing misorientation angle the average indium content decreased significantly. This effect was accompanied by the strong increase of the emission line bandwidth suggesting more pronounced indium segregation. The results of cathodoluminescence measurements show that these effects correspond to different number of atomic steps/terraces existing on the surface of gallium nitride substrate. Very interesting result is also demonstrated concerning p-type GaN layers. With increasing misorientation, the free hole density drastically increases above 1018 cm–3. This improvement in p-type doping is not related to the increased Mg concentration but to the reduction in the compensating donor density. Using this advantage we demonstrate nitride light emitters with improved electrical properties. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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