Abstract
We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) by etching through the MQW active region. With 20-mA injection current, it was found that forward voltages were 3.29, 3.31, and 3.38 V while output powers were 7.5, 9.0, and 11.3 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED, and mesh MQW LED, respectively. The larger LED output power is attributed to the increased light extraction efficiency.
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