Abstract
In this study, pulse-mode rapid thermal annealing was used to nitridize zinc oxide film. It was found that the nitridation can introduce many nitrogen atoms into the processed film and form chemical bonds with zinc oxide. The electrical measurements verified that the majority carrier within the nitrided film is the hole. Besides, the nitridation process improved the crystalline structure of the processed film so that the nitrided zinc oxide showed high optical transmittance within the visible wavelength region. The carrier concentration, mobility, and resistivity of nitrided zinc oxide were 1.39 × 1016 cm−3, 9.5 cm2 V−1 s−1, and 47.45 Ω cm, respectively. This pulse-mode rapid thermal nitridation is an alternative method to obtain stable p-type zinc oxide film.
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