Abstract
The metalorganic chemical vapor deposition (MOCVD) growth of InN has been studied using Si(111) and α-Al 2O 3 (0001) substrates. An InN film grown on a Si substrate is poorly oriented, while a single-crystalline InN film is obtained on an α-Al 2O 3 substrate in spite of the larger lattice mismatch for InN(0001)/α-Al 2O 3(0001) than that for InN(0001)/Si(111). Such a remarkable difference in InN film quality between Si and α-Al 2O 3 substrates is found to be brought on by the nitridation of the substrate surface before the growth. It has been revealed from reflection high-energy electron diffraction (RHEED) and electron spectroscopy for chemical analysis (ESCA) analyses that silicon nitride of amorphous phase is formed on a Si(111) surface at a relatively low temperature (≈500°C), which prevents the growth of heteroepitaxial InN on Si. Nitridation of α-Al 2O 3 surface occurs at a temperature higher than 800°C, and brings about a remarkable improvement of heteroepitaxial InN quality. This is because an AlN is formed and the lattice mismatch is reduced from 25% for InN/α-Al 2O 3 to about 13% for InN/AlN.
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