Abstract
Nitrogen plasma exposure (NPE) effects in indium doped bulk n-CdTe as studied by electrical measurements are reported here, Excellent rectifying characteristics of schottky diodes, with an increase in the barrier height is observed after the plasma exposure. This effect is attributed to the fermi level pinning by acceptor-like surface states created by plasma exposure. Surface damage in the plasma exposed samples is however, found to be absent as seen from the SEM. Capacitance-voltage (C-V) depth profile shows the active donor concentration at the surface to decrease by as much as 88% in the highly doped samples. This decrease in the donor concentration is explained by the compensation process
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