Abstract
Nitric–phosphoric (NP) acid etching has been regarded as one of the most effective methods for the formation of low resistance back contact with the metal electrode in CdTe based photovoltaic cells. We studied CdTe back surfaces and the changes with time of exposure to NP acid with x-ray photoelectron spectroscopy (XPS), and atomic force microscopy. Strong etching dependence on the back surface chemical composition, and surface roughness, was observed. In order to study the effect of the NP acid etching on surface degradation, the sample was left in open ambient condition for three weeks and XPS measurement in combination with ion sputtering was performed on unetched and highly etched parts. The difference in depth profiles of the NP acid etched and unetched CdTe surface has been discussed.
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