Abstract
AbstractDeep buried metallic layers are formed by 6 MeV high dose Ni implantation into Si at 450 K. The layers have been characterized by optical reflectivity and spreading resistance depth profiling as well as TEM and XTEM. They consist of epitaxially grown NiSi2 crystallites of both type-A and type-B orientations and thin NiSi2-platelets on {111} lattice planes. Investigations indicate the suppression of amorphization by Ni as well as damage gettering of Ni atoms.
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