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Abstract
Nickel sulfide nanostructures have been successfully prepared with two different sulfur sources like thiourea (SC(NH2)2) and sodium sulfide by the successive ionic layer adsorption and reaction (SILAR) method. The functionalized nitrile-butadiene rubber (F-NBR) was used as stabilizing agent for formation of nickel sulfide semiconductor nanoparticles. The nanoparticle sizes correspond to 8.5nm and 7nm using thiourea and sodium sulfide respectively. The as-synthesized NiS and Ni3S4 nanostructures were characterized by XRD, SEM, EDX, UV–vis and FTIR spectroscopy methods. A systematic investigation of the final end products has been done to elucidate the formation mechanism at different experimental parameters. Using thiourea the optical band gap of NiS for 4, 6 and 8 cycles were determined to be 3.12, 2.93 and 2.81eV, respectively. The optical band gap of Ni3S4 for 6 and 8 cycles were determined to be 2.8 and 2.15eV, respectively.
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