Abstract
Microbolometers have been fabricated using a thin niobium film as the detector element. These detectors operate at room temperature, are impedance matched to planar antennas, and are suitable for broadband use at far-infrared wavelengths. We have achieved responsivities of up to 21 V/W at a bias of 6.4 mA, and electrical noise equivalent powers (NEP) of as low as 1.1/spl times/10/sup -10/ W//spl radic/(Hz) at 1 kHz at a bias of 3.6 mA. At this bias, the detectors are 1/f-noise limited below 1 kHz and are Johnson noise limited above 10 kHz. The 1/f noise in V//spl radic/(Hz) increases approximately linearly with bias with a typical level of 0.39 I(mA)//spl radic/(f(kHz)) This level of 1/f noise is approximately a factor of 7 below the best reported for bismuth microbolometers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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