Abstract
Metal/metal oxide interfaces have significant impact on modern technologies like microelectronics, solar cells, magnetic storage, and sensors due to their distinct electronic and structural properties. Such interfaces sometimes deviate from ideal bulk-termination which influences the system's overall performance. Here, we present the study of the interfacial electronic structure formed by the deposition of Nd layers onto NiO thin films utilizing X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoemission spectroscopy (UPS). Our study indicates that the interface between the rare earth metal (Nd) and NiO differs from the ideal sharp interface. The portion of NiO surface reduced to metallic Ni while the deposited Nd metal is oxidized, indicating the interfacial oxidation/reduction process. The thickness of this interfacial Ni layer increases with increase in Nd metal deposited and reaches maximum depth of 3.0 Å when effective Nd overlayer thickness reaches 7.9 Å. Such an interface reaction could be utilized in heterostructures where an intentional reduction of the oxides is desired.
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