Abstract
In our study, transparent and conductive films of NiOx were successfully deposited by sol-gel technology. NiOx films were obtained by spin coating on glass and Si substrates. The vibrational, optical, and electrical properties were studied as a function of the annealing temperatures from 200 to 500 °C. X-ray Photoelectron (XPS) spectroscopy revealed that NiO was formed at the annealing temperature of 400 °C and showed the presence of Ni+ states. The optical transparency of the films reached 90% in the visible range for 200 °C treated samples, and it was reduced to 76–78% after high-temperature annealing at 500 °C. The optical band gap of NiOx films was decreased with thermal treatments and the values were in the range of 3.92–3.68 eV. NiOx thin films have good p-type electrical conductivity with a specific resistivity of about 4.8 × 10−3 Ω·cm. This makes these layers suitable for use as wideband semiconductors and as a hole transport layer (HTL) in transparent solar cells.
Highlights
In our study, transparent and conductive films of nickel oxide (NiOx) were successfully deposited by solgel technology
Hydroxyl group stretching vibrations are mainly observed in the spectral range 3000–4000 cm−1 with the band at 1639 cm−1 attributed to the bending vibrations
The bands associated with the hydroxyl species are very strong and broad at lower annealing temperatures (200 and 300 ◦ C), and they decrease in intensity with the increase of the temperatures to 400 and 500 ◦ C
Summary
Transparent and conductive films of NiOx were successfully deposited by solgel technology. The vibrational, optical, and electrical properties were studied as a function of the annealing temperatures from 200 to 500 ◦ C. The optical transparency of the films reached 90% in the visible range for 200 ◦ C treated samples, and it was reduced to 76–78% after high-temperature annealing at 500 ◦ C. NiOx thin films have good p-type electrical conductivity with a specific resistivity of about 4.8 × 10−3 Ω·cm. This makes these layers suitable for use as wideband semiconductors and as a hole transport layer (HTL) in transparent solar cells
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