Abstract
The effect of Ni on the near-infrared luminescence emitting from silicon nanocrystals embedded in SiO2 matrix has been investigated. According to the thermodynamics calculation, nickel can give additional driving force to the phase separation process. The photoluminescence intensity increases with the increasing annealing temperature because of the crystallization of amorphous silicon in SiOx films. The intensity of near-infrared emission of SiO1.56∕Ni∕Si is stronger by a factor of 5 than that of regular specimen after annealing at 1000 or 1100°C due to the increase of the density of Si nanocrystals.
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