Nickel, cobalt and iron silicide formation stimulated by Argon implantation

Abstract

The problem of thin (45–100 nm) nickel, cobalt and iron films interacting with monocrystalline Si(100) during rapid thermal annealing at 400–950° for 5–40 s is treated. The reaction of the metal atoms with the silicon was stimulated by implantation of 50–150 KeV argon ions to a dose range of 5 × 10 15–5 × 10 16 atoms cm -2. The parameters of the silicide structures so obtained show that, depending on the implantation conditions, the silicides have perfect characteristics upon argon implantation to a depth, corresponding to R p ≈ ( 1 2 – 4 5 d Me , at doses above 5 × 10 15 atoms cm -2. Such silicides have an epitaxial structure with χ min = 0.1−0.8 and resistivity of 7−9 μΩ cm (CoSi 2), 32−34 μΩ cm (NiSi 2), 60−80 μΩ cm (FeSi 2).