Abstract
The latest developments in our understanding of the initial stages of Ni and Co silicide formation are described. Particular attention is given to the composition and structure of the ultrathin silicide layer which forms upon room temperature deposition of Ni or Co on atomically clean Si(111). The role of these as-deposited silicide layers as precursors to the formation of epitaxial NiSi 2 and CoSi 2 at higher temperature will be discussed in some detail. Finally, our current state of knowledge concerning the geometric and electronic structures of the NiSi 2Si(111) and CoSi 2Si(111) interfaces will be reviewed.
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