Abstract
The broadband near-infrared (NIR) pc-LED is considered as a new generation of light source for substance measurements based on NIR spectroscopy. The most studied Cr3+ doped broadband NIR phosphors emit in the near-infrared I region. However, there is a demand for broadband near-infrared II solid-state light sources for expanding the variety of detected substances. Herein, Ni2+ activated NIR II Mg14Ge5O24 phosphor is synthesized by high-temperature solid-state method. The phosphor shows a asymmetric broad NIR emission band peaked at 1420 nm, that is assigned to the 3T2(3F)→3A2(3F) transition of Ni2+. It is observed that the asymmetric emission band is contributed from two Ni2+ centers, Ni2+(I) and Ni2+(II), occupying Ge4+ site with the emission peaked at 1313 nm and Mg2+ site with the emission peaked at 1435 nm, respectively. It is found that the addition of Ti4+ and B3+ can significantly change the intensity ratio of the two Ni2+ centers and enhance the overall emission intensity. Moreover, the addition of Mn4+ results in only Ni2+(II) emission. The origin of the unique features mentioned above is discussed. The temperature dependence of the NIR emissions is also studied. Finally a broadband NIR II pc-LED with a moderate electro-optical conversion efficiency of 1.4 % is fabricated based on a 400 nm LED chip. The results indicate that the modified Mg14Ge5O24:Ni2+ is a potential broadband NIR II phosphor for pc-LED applications.
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