Abstract
A thin layer of Ge (1nm) deposited between a 30nm Ni film and a (100)Si substrate was used as a marker for the diffusing species during Ni silicide formation. In situ X-ray diffraction heat treatments with temperatures ranging from 150 to 400°C were performed to show the specific steps of silicide formation. Atom probe tomography (APT) enabled the diffusing species during the Ni deposition and during the formation of δ-Ni2Si and NiSi phases to be determined. APT measurements of the redistribution of Ge during the stress relaxation of δ-Ni2Si and during the formation of NiSi highlighted the mechanisms of stress relaxation and morphological degradation of NiSi.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
