Abstract
The formation of Ni silicides on Si 1 − y C y ( y = 0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si 0.982C 0.018 samples, the process window of NiSi was shifted and extended to 450–700 °C. Moreover, there was an additional strain introduced into the Si 1 − y C y epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si 1 y C y for device applications.
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