Abstract
AbstractNickel silicon oxide mixture was sputtered on a‐Si with Ni‐Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly‐Si materials induced by Ni‐Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly‐Si. Besides, it reduced the residual Ni content in the resulted poly‐Si film. The transfer characteristic curve of poly‐Si TFT and a TFT‐OLED display demo made with this kind of new inducing source were also presented in this paper. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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