Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation

Suyuan Wang,Yuhua Zuo,Chuanbo Li,Qiming Wang,Chunlai Xue,Buwen Cheng,Jun Zheng

doi:10.1063/1.4939588

Abstract

N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are realized by shallow P implant and Ni(Ge1−x−ySixSny) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy.

Highlights

N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method
Ohmic contacts to n-type Ge1−x−ySixSny are realized by shallow P implant and Ni(Ge1−x−ySixSny) formation after rapid thermal annealing at 400 ◦C
It is expected that Ni would be promising metal for n-Ge1−x−ySixSny ohmic contact through forming Ni(GeSiSn) after annealing process

Summary

Introduction

N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation

Results

Conclusion