Abstract
Next-generation transistors based on III-V semiconductor alloys present strong material requirements for their source and drain contacts, and Ni-In-Ga-As is a promising candidate. The authors correlate the electrical characteristics of this material, as a function of thermal annealing, with structural and chemical bonding information from x-ray spectroscopy, providing the comprehensive understanding needed for device fabrication strategies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
