Abstract
In this letter, a high-performance unipolar resistive random access memory with Ni electrode/ HfOx/AlOy/p+-Si substrate structure is reported. Compared with Ni/HfOx/p+ -Si devices, a significant improvement in terms of switching parameters such as set/reset voltages, on/off resistance ratio, and resistance distribution is successfully demonstrated. It is believed that the stabilization of the conductive filament generation inside the switching HfOx film due to the AlOy incorporation plays a key role for the improved performance.
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