Abstract
Film growth and reaction kinetics studies have shown that trigermane (Ge3H8) is a superior Ge source for the epitaxial synthesis of Ge1−ySny/Si(100) alloys using ultra-high vacuum chemical vapor deposition. The Ge3H8/SnD4 combination yields 3-4 times higher growth rates than the traditional Ge2H6/SnD4 approach, with film Sn/Ge ratios reflecting the corresponding gas-phase stoichiometries much more closely. These advances have led to optical quality Ge1−ySny layers with Sn concentrations up to at least 9% and thicknesses approaching 1 μm. These thick films are found to be crucial for the observation of a strong, tunable photoluminescence signal near the threshold of the predicted direct-indirect bandgap crossover.
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