Abstract
AbstractIn order to obtain mirror-like, damage free and flat surfaces on compound semiconductor wafers, a progressive mechanical and chemical polishing (P-MAC polishing) has been proposed and a new polishing machine has been developed. This polishing method, characterized by changing/shifting the polishing mechanism positively as polishing advances, is able to finish GcAs single crystal pieces satisfactorily using smooth and soft polishing tools and bromine-methanol solution.Then, the wafer polishing machine, which has a unique construction to change working conditions or polishing mechanism, and has an automatic cassette to cassette system, was built. For example, performances on polished GaAs (100) wafers of 2 inches in diameter are: flatness < 2 μu/80% of diameter; surface roughness < 2 nm Rmax.
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