Abstract
Preparation of a-Si:H films using Jet PACVD method has been examined. Standard deposition conditions resulted in growth rates in order of 1 nm/s. Photosensitivity of films up to 6 orders of magnitude has been observed. Features of the deposition method used and deposited film properties are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have