New Wavelength-Demultiplexing InGaAsP/InP Photodiodes

Abstract

The new wavelength-demultiplexing photodiodes which have the ability to demultiplex the incident light into two and three spectral regions were proposed and fabricated. The first type of the diode covers λ<0.95 µm and 0.95<λ<1.41 µm spectral regions. The second type of the diode covers 0.95<λ<1.28 µm and 1.28<λ<1.49 µm spectral regions. The anodic oxide was formed to restrict the electrode area as well as to prevent the reflection at the surface. The fabricated diode exhibited the quantum efficiencies of 85% and 63% and the crosstalks of -35.5 dB and -27.5 dB at λ=0.98 µm and 1.30 µm, respectively. The third type of the diode divides the spectral region into three parts; λ<0.95 µm, 0.95<λ<1.28 µm and 1.28<λ<1.49 µm. These diodes are useful for wavelength-multiplexed optical fiber communication system.