Abstract
AbstractSemiconductors with isoelectronic centers are actively studied to fabricate arrays of identical single photon emitters. Self‐assembling of 4N10In and 1N4In clusters in GaAs‐rich InxGa1‐xNyAs1‐y is represented. All or almost all In atoms are in 4N10In clusters from 0 to 800 °C in InxGa1‐xNyAs1‐y with x = 1×10‐4, y = 1×10‐4 and x = 1×10‐5, y = 1×10‐5. All or almost all nitrogen atoms are in 1N4In clusters if x = 0.01, y = 1×10‐4 and x = 1×10‐3, y = 1×10‐6. There are both types of clusters in alloys with x = 5×10‐5, y = 5×10‐7; x = 2×10‐4, y = 2×10‐6; x = 1×10‐4, y = 1×10‐5 and x = 2×10‐3, y = 2×10‐4 and portions of nitrogen atoms in clusters depend on the composition and temperature. Thus, InxGa1‐xNyAs1‐y are promising semiconductors to obtain arrays of identical isoelectronic clusters with the desirable density. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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