Abstract
A double sided AlxGa1–xSb1–yAsy–GaSb–AlxGa1–xSb1–yAsy heterostructure was used in an injection laser which emitted stimulated radiation of 1.5–1.8 μ wavelengths at room or lower temperatures. The threshold current density was 220 A/cm2 at 77°K and 6.2 kA/cm2 at 300°K.
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