Abstract
AbstractWe have developed new organic (PEDOT:PSS)‐inorganic (ZnSSe) hybrid structure avalanche photodiodes (APDs). The device wafers are grown by MBE on n‐GaAs substrates, and PEDOT:PSS is formed by spin‐coating method on the semiconductor ZnSSe layers. We revealed an energy barrier height of 1.0 eV in the interface of i‐ZnSSe and PEDOT:PSS layer by photoresponse method. The device exhibits external quantum efficiency of 90% at 325 nm. We confirmed intrinsic avalanche breakdown at about 28 V and mutiplicaton factor showed 650 at a reverse bias of 34.2 V (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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