Abstract
New types of resonant tunneling currents at Si-p/n junctions, which are caused by the resonance between the donor and acceptor-dopant states and by the resonance states in a triangular quantum-well-like potential in the p/n junctions, are studied by a time-evolution simulation of electron wave packets. It is shown that the tunneling currents are enhanced by these resonances because the resonance states work as step stones for the inter-band tunneling transitions and the effective tunneling distance becomes short. We also show that such enhancement of tunneling currents can occur in not only indirect band-gap Si systems but also direct band-gap semiconductor systems.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
