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Abstract
A new type of photo-induced photoluminescence (PL) fatigue in glassy semiconductors of the system GeSe in the temperature range 80–300 K has been observed. The duration of this effect t f is less than 30 s and it varies with temperature and the energy of exciting light quanta E ex. After fatigue the intensity of PL returns to its original value if the sample is kept in the dark. The time of complete restoration is τ o ≥ 20 s and depends on temperature. The results are interpreted by comparing the probabilities of radiative and non-radiative transitions of quasi-excitons formed during irradiation.
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