Abstract
Fabrication procedure using microfabrication technology and DC characteristics of new type of Nb microbridges are presented. The bridges have a threedimensional rotationally symmetric structure which connects two Nb planes separated by a thin SiO2 film through a small pinhole in the SiO2 film. The bridges exhibit no hysteresis in the current-voltage characteristics and the critical current varied weakly with a temperature. Two-junction SQUID's composed of the present bridges show a periodic dependence of the critical current (Ic) on an applied magnetic field at a temperature where Ic almost saturates with a temperature. These are important improvement over one or two-dimensional microbridges.
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