Abstract
AbstractDoping of the lead telluride and related alloys with the group III impurities results in an appearance of the unique physical features of a material, such as such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review the physical principles of operation of the photodetecting devices based on the group ifi-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group IIIdoped IV-VI in comparison with the modem photodetectors are summarized.
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