Abstract
A new type novel galvanomagnetic effect is found experimentally which corresponds to neither Hall nor the usual magnetoresistance effect. The dependence of this effect on the angle θ between the current and the magnetic induction is also found to be the form of sin 2θ, in contrast with that of the magnetoresistance effect cos 2θ and that of Hall effect sin θ. An outstanding feature of the present novel galvanomagnetic effect is that the rate of the voltage variation depending on the magnetic induction is extremely large as compared with that of the usual magnetoresistance effect. It is theoretically confirmed that this effect is well understood on the basis of the two carrier types model.
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