Abstract
Thin film cermet resistors have been prepared by flash evaporation of various compositions containing a transition metal oxide as one constituent. In particular resistors derived from an evaporant mix based on the oxide Mn 2O 4 have near zero values of T.C.R. at resistivities of the order of 2000 Ω/□. Evaporant compositions consisted of a mixture of a metal oxide and silicon, in place of the more conventional silicon monoxide/metal (e.g. chromium) compositions. A novel continuous-feed flash evaporation source used in the preparation of cermet resistors is also described.
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