Abstract
Thick-film strain gauges having strain characteristics with small temperature dependency have been developed. Their gauge factor is more than ten times higher than that of a thin-film strain gauge and nearly half the value of a semiconductor gauge. This strain gauge is a thick film composed of 15 wt. % WO3⋅15 wt. % RuO2⋅70 wt. % glass (weight percent ratio). Its gauge factor is 40 to 55, its temperature coefficient of resistance is 0 to −200 ppm/°C, and its temperature coefficient of gauge factor is about −400 ppm/°C. The change of gauge factor in a repeat test after a strain had been applied to the gauge was smaller than 1%. The gauge was also very stable.
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