Abstract
A two-dimensional (2D) photonic bandgap (PBG) crystal is formed from an array of either rods (pillars) or holes arranged in a periodic lattice. Use of selective epitaxy to fabricate a 2D PBG crystal provides the possibility of obtaining pillars with a high aspect ratio and facets free from surface damage. We have fabricated semiconductor 2D PBG crystals using selective metalorganic vapor phase epitaxy on (111)B GaAs for the first time. The fabricated crystals consist of hexagonal GaAs micropillars arranged in a triangular lattice of 490 nm pitch. Each micropillar has a high aspect ratio (>10) and six smooth, steep sidewalls consisting of {\\overline110} facets.
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