Abstract
The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on a GaAs(111)A substrate; it consists of alternating undoped low-temperature grown GaAs (LTG-GaAs) layers and GaAs layers synthesized in the standard high-temperature regime and doped with silicon (GaAs:Si). The As4/Ga flow ratio γ is chosen such as to produce p-type GaAs:Si layers. LTG-GaAs layers were grown at an enlarged γ value. The samples grown on GaAs(100) substrates were single-crystal, whereas the single-crystal growth on GaAs(111)A substrates changed to polycrystalline when the film thickness reached 320–340 nm. The sizes of As precipitates in annealed samples, their distribution over the film thickness, and specific features of their crystal structure have been analyzed.
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