Abstract
Spin injection efficiency based on a conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch; here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch to enhance spin injection efficiency. By performing first-principles calculations based on superlattice structure, we have studied a representative system of Mn2CoAl/semiconductor spin injector scheme. The results showed that a high spin polarization was maintained at the interface in systems of Mn2CoAl/Fe2VAl constructed with (100) interface and Mn2CoAl/GaAs with (110) interface, and the latter is expected to possess long spin diffusion length. Inherited from the spin gapless feature of Mn2CoAl, a pronounced dip was observed around the Fermi level in the majority spin density of states in both systems, suggesting fast transport of the low-density carriers.
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