New spin-electronics compositions: Large ferromagnetic order of BaSn0.98-xFe0.02CuxO3 (x = 0.02, 0.04, 0.06) semiconductor

Abstract

Inducing robust ferromagnetic order in dilute magnetic semiconductor materials is an essential topic for spin-based electronics devices. Herein, the escalating concentration of nonmagnetic Cu ions was employed to strongly reinforce the room temperature ferromagnetism of 2% Fe doped BaSnO3 structure. BaSn0.98-xFe0.02CuxO3 (x = 0.02, 0.04 or 0.06) compositions were prepared by adapted sol gel method. In all compositions, pure single phase with cubic structure of BaSnO3 was identified by the X-ray diffraction (XRD) technique. Pure BaSnO3 gives a band gap energy of 3.25 eV which red shifted to 3.1, 3.12 and 3.13 eV after incorporation of (2% Fe, 2% Cu), (2% Fe, 4% Cu) and (2% Fe, 6% Cu) ions, respectively. The scanning electron microscope (SEM) images reflects that the Fe/Cu blends obstruct the grains growth of BaSnO3 and also influenced on the particles shape and porosity. The energy dispersive X-ray (EDX) maps confirmed the homogenous spatial distribution of Fe and Cu in the codoped BaSnO3 structure. The X-ray photoelectron spectroscopy (XPS) results of BaSn0.92Fe0.02Cu0.06O3 prove that Ba, Sn, O, Fe and Cu elements possess the oxidation states of +2, +4, −2, +3 and +1/+2, respectively. The magnetic performance of BaSnO3 structure exhibits a minor ferromagnetic loop with measured coercivity (Hc) of 330 Oe, magnetization (Ms) of 0.0023 emu/g and retentivity of 0.00077 emu/g. Interestingly, the addition of 6 wt% Cu (nonmagnetic dopant) plus 2 wt% Fe (magnetic dopant) strongly boosts the saturation magnetization value of BaSnO3 to 1.85 emu/g. The results open the door to tune the ferromagnetic order of BaSnO3 using nonmagnetic dopant to avoid the formation of magnetic impurities. The F-center exchange interaction and the bound magnetic polarons model were used to explain the measured room temperature ferromagnetism.