Abstract
AbstractIn this work novel slurries both for copper and tantalum nitride removal were developed. In the first step the Cu bulk is removed, by using high selective slurry, which stops on the underlying TaN barrier. The selectivity of Cu vs. TaN achieved with this slurry is larger than 1/100. High selective second step slurry is further introduced for removing the barrier material. In the present work data concerning dishing and erosion will be presented as a function of line width and pattern density across the wafer. Electrical yield measurements on shorts and opens of meander-fork structures will be discussed.
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