New silicon containing positive resist and its applications for sub-half micron lithography

Abstract

New silicon containing photosensitive polymers have been synthesized using poly(phydroxybenzylsilsesquioxane-co-p-methoxybenzylsilsesquioxane) resins as starting materials and partially replacing the available -OH groups with 2,1-diazonaphthoquinone sulfonyloxy moiety. Bilayer resist formulations derived from these polymers have higher sensitivity and contrast as compared to the resists based on silicon resins/PAC mixtures for sub-micron and sub-half micron I-line, DUV, and g-line lithography.