Abstract

New III-V compound semiconductors Tl x In 1-x-y Ga y P (thallium indium gallium phosphide), which we proposed recently for 0.9 μm to over 10 μm laser diodes, are grown by gas source molecular beam epitaxy on InP and GaAs substrates for the first time. They have a potential to exhibit a temperature-independent band-gap energy. Grown layers exhibit (2 x 4) surface reconstruction. X-ray diffraction measurements show the successful growth of TlInP, TlGaP and TlInGaP, although phase separation is observed in TlGaP grown on GaAs. Photoluminescence emission is observed for TlInP and TlInGaP grown on InP. Hall measurements show n-type conduction with a room temperature electron concentration of 6.3 x 10 15 cm -3 and an electron mobility of 2500 cm 2 /V. s.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.