Abstract
New current and voltage references are proposed which utilize depletion-mode field effect transistors and resonant tunneling diodes (RTDs) in a self-bootstrapped configuration to take advantage of the ultra-low local transconductance of RTDs and the high output-impedance of cascoded amplifier stages. These references promise improved supply rejection compared with that of the best existing GaAs MESFET voltage references. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
