Abstract
We propose a new concept for the reduction of impurity scattering in remotely doped GaAs single quantum wells by using heavy-mass X-electrons in the short-period AlAs/GaAs superlattice barriers which smooth the potential fluctuations of the ionized Si dopants. Electron mobilities as high as 120 m 2 /V . s and electron densities of 1.6 x 10 16 m -2 are obtained in 10 nm GaAs single quantum wells in the one-subband occupation mode without any parallel conductance. To demonstrate the applicability of our concept magnetotransport and photoluminescence measurements together with self-consistent calculations are presented. Limitations of the effectiveness of the reduction of impurity scattering by impurity segregation and intermixing in the superlattice are discussed.
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